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Bulletin I27182 08/06
EMP30P06D
PIM+
EMP Features:
Power Module:
* * NPT IGBTs 30A, 600V 10us Short Circuit capability Square RBSOA Low Vce(on) (2.05Vtyp @ 30A, 25C) Positive Vce(on) temperature coefficient Gen III HexFred Technology Low diode VF (1.34Vtyp @ 30A, 25C) Soft reverse recovery 5m sensing resistors on all phase outputs and DCbus minus rail Thermal coefficient < 50ppm/C
Package:
*
*
EMP - Bridge Brake inverter (EconoPack 2 outline compatible)
Power Module schematic:
DC+ OUT DC+ IN DC+ (signal)
Description
The EMP30P06D is a Power Integrated Module for Motor Driver applications with embedded sensing resistors on all three-phase output currents. Each sensing resistor's head is directly bonded to an external pin to reduce parasitic effects and achieve high accuracy on feedback voltages. Since their thermal coefficient is very low, no value compensation is required across the complete operating temperature range. The device comes in the EMP package, fully compatible in length, width and height with EconoPack 2 outline.
TM
IN1 IN2 IN3
BRK
Out 1 Out 2 Out 3
DC-
DC- (signal)
Three phase bridge brake inverter with current sensing resistors on all output phases and thermistor
Power module frame pins mapping
DC OUT+ DC IN+
IN1
OUT1
IN2
OUT2
IN3
OUT3
DC IN-
BRK
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EMP30P06D
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Pins mapping
Symbol IN1/2/3 DC OUT+ DC IN+ DC INDC + DC BRK Brk Th + Th G1/2/3 E1/2/3 Gb Eb R1/2/3 + R1/2/3 G4/5/6 E4/5/6 OUT1/2/3 Lead Description Diode Bridge power input pins DC Bus plus power output pin DC Bus plus power input pin DC Bus minus power input pin DC Bus plus signal connection (Kelvin point) DC Bus minus signal connections (Kelvin points) Brake power output pin Brake signal connection (Kelvin point) Thermal sensor positive input Thermal sensor negative input Gate connections for high side IGBTs Emitter connections for high side IGBTs (Kelvin points) Gate connection for brake IGBT (Kelvin point) Emitter connection for brake IGBT (Kelvin point) Output current sensing resistor positive input (IGBTs emitters 1/2/3 side, Kelvin points) Output current sensing resistor negative input (Motor side, Kelvin points) Gate connections for low side IGBTs Emitter connections for low side IGBTs (Kelvin points) Three phase power output pins
General Description
The EMP module contains six IGBTs and HexFreds Diodes in a standard inverter configuration. IGBTs used are the new NPT 600V-30A (current rating measured at 80C), generation V from International Rectifier; the HexFred diodes have been designed specifically as pair elements for these power transistors. Thanks to the new design and technological realization, these devices do not need any negative gate voltage for their complete turn off; moreover the tail effect is also substantially reduced compared to competitive devices of the same family. This feature tremendously simplifies the gate driving stage. Another innovative feature in this type of power modules is the presence of sensing resistors in the three output phases, for precise motor current sensing and short circuit protections, as well as another resistor of the same value in the DC bus minus line, needed only for device protections purposes. A complete schematic of the EMP module is shown on page 1 where all sensing resistors have been clearly evidenced, a thermal sensor with negative temperature coefficient is also embedded in the device structure. The package chosen is mechanically compatible with the well known EconoPack outline, Also the height of the plastic cylindrical nuts for the external PCB positioned on its top is the same as the EconoPack II, so that, with the only re-layout of the main motherboard, this module can fit into the same mechanical fixings of the standard EconoPack II package thus speeding up the device evaluation in an already existing driver. An important feature of this new device is the presence of Kelvin connections for all feedback and command signals between the board and the module with the advantage of having all emitter and resistor sensing independent from the main power path. The final benefit is that all low power signal from/to the controlling board are unaffected by parasitic inductances or resistances inevitably present in the module power layout. The new package outline is shown on bottom of page 1. Notice that because of high current spikes on those inputs the DC bus power pins are doubled in size compared to the other power pins. Module technology uses the standard and well know DBC (Direct Bondable Copper): over a thick Copper base an allumina (Al2O3) substrate with a 300m copper foil on both side is placed and IGBTs and Diodes dies are directly soldered, through screen printing process. These dies are then bonded with a 15 mils aluminum wire for power and signal connections. All components are then completely covered by a silicone gel for mechanical protection and electrical isolation purposes.
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Absolute Maximum Ratings (TC=25C)
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to VDC-, all currents are defined positive into any lead. Thermal Resistance and Power Dissipation ratings are measured at still air conditions.
Symbol VDC VCES IC @ 100C IC @ 80C IC @ 25C Inverter and Brake ICM IF @ 100C IF @ 25C IFM VGE PD @ 25C PD @ 100C VRRM VRSM Io Bridge IFSM DC Bus Voltage Collector Emitter Voltage IGBTs continuous collector current (TC = 100 C, fig. 1) IGBTs continuous collector current (TC = 80 C,fig 1) IGBTs continuous collector current (TC = 25 C,fig 1) Pulsed Collector Current (Fig. 3, Fig. CT.5) Diode Continuous Forward Current (TC = 100 C) Diode Continuous Forward Current (TC = 25 C) Diode Maximum Forward Current Gate to Emitter Voltage Power Dissipation (One transistor) Power Dissipation (One transistor, TC = 100 C) repetitive peak reverse voltage (Tj = 150 C) non repetitive peak reverse voltage Diode Continuous Forward Current (TC = 100 C, 120 Rect conduction angle) One-cycle forward. Non-repetitive on state surge current (t=10ms, Initial Tj =150C) Current I2t for fusing (t=10ms, Initial Tj =150C) 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied No voltage reapplied -20 Parameter Definition Min. 0 0 Max. 500 600 25 30 45 90 25 45 90 +20 138 55 1400 1500 45 225 270 253 365 3650 3.5 -40 -40 -2500 +150 +125 +2500 A 2s A2s Nm C V A V W A Units V
V
I2t I2t MT Power Module TJ TSTG Vc-iso
Current I2t for fusing (t=0.1 to 10ms, no voltage reapplied, Initial Tj = 150C) Mounting Torque Operating Junction Temperature Storage Temperature Range Isolation Voltage to Base Copper Plate
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EMP30P06D
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Electrical Characteristics: Inverter and Brake
For proper operation the device should be used within the recommended conditions. TJ = 25C (unless otherwise specified)
Symbol V(BR)CES V(BR)CES / T Parameter Definition Collector To Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Min. 600 0.67 1.91 VCE(on) Collector To Emitter Saturation Voltage 2.46 2.19 VGE(th) VGE(th) / Tj gfe Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Trasconductance 4 4.46 -10 18 250 ICES Zero Gate Voltage Collector Current 368 580 2000 VFM IGES R1/2/3 Diode Forward Voltage Drop Gate To Emitter Leakage Current Sensing Resistors 4.95 5 1.29 1.25 1.48 1.5 100 5.05 V nA m A 2.2 2.87 2.55 5 V mV/C S V Typ. Max. Units V V/C Test Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1mA (25 - 125 C) IC = 25A, VGE = 15V IC = 45A, VGE = 15V IC = 25A, VGE = 15V, TJ = 125 C VCE = VGE, IC = 250A VCE = VGE, IC = 1mA (25 - 125 C) VCE = 50V, IC = 30A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 125 C VGE = 0V, VCE = 600V, TJ = 150 C IC = 25A IC = 25A, TJ = 125 C VGE = 20V 8 5, 6 7, 9 10, 11 12 Fig.
Electrical Characteristics: Bridge
For proper operation the device should be used within the recommended conditions. TJ = 25C (unless otherwise specified)
Symbol VFM VF(TO) Irm Parameter Definition Forward Voltage Drop Threshold voltage Reverse Leakage Current 0.78 5 Min. Typ. Max. 1.45 Units V V mA Test Conditions tp = 400s, Ipk = 45A TJ = 125 C TJ = 125 C VR = 1200V Fig. 24
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Switching Characteristics: Inverter and Brake
For proper operation the device should be used within the recommended conditions. TJ = 25C (unless otherwise specified)
Symbol Qg Qge Qgc Eon Eoff Etot Eon Eoff Etot td (on) Tr td (off) Tf Cies Coes Cres RBSOA Parameter Definition Total Gate Charge (turn on) Gate - Emitter Charge (turn on) Gate - Collector Charge (turn on) Turn on Switching Loss Turn off Switching Loss Total Switching Loss Turn on Switching Loss Turn off Switching Loss Total Switching Loss Turn on delay time Rise time Turn off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Min Typ 102 14 44 0.469 0.338 0.807 0.631 0.604 1.235 101 25 130 105 1750 160 60 FULL SQUARE pF Max 153 21 66 0.779 0.507 1.281 0.946 0.906 1.852 152 38 195 156 ns VGE = 15V, RG =10, L = 800H VCC = 30V VGE = 0V f = 1MHz TJ = 150 C, I C =90A, VGE = 15V to 0V VCC = 500V, Vp = 600V, RG = 10 s 925 77 62 0.806 1.06 0.03 23 Pdiss Total Dissipated Power 40 61 95 W 93 0.9 1.22 1165 J ns A C/W C/W C/W IC = 3.3A, VDC = 300V, fsw = 8kHz, TC = 55 C IC = 6A, VDC = 300V, fsw = 8kHz, TC = 55 C IC = 6A, VDC = 300V, fsw = 16kHz TC = 55 C, IC = 14A, VDC = 300V, fsw = 4kHz, TC = 55C PD1 PD2 PD3 See also fig. 25 and 26 TJ = 150 C, VGE = 15V to 0V VCC = 360V, Vp= 600V, RG = 10 TJ = 125 C IF= 30A, VCC = 400V, VGE = 15V, RG =10, L = 800H 4 CT2 CT3 WF4 17,18 19,20 21 CT4 WF3 22 mJ mJ nC Units IC = 30A VCC = 400V VGE = 15V IC = 30A, VCC = 400V, TJ = 25 C VGE = 15V, RG =10, L = 800H Tail and Diode Rev. Recovery included IC = 30A, VCC = 400V, TJ = 125 C VGE = 15V, RG =10, L = 800H Tail and Diode Rev. Recovery included IC = 30A, VCC = 400V, TJ = 125 C CT4 WF1 WF2 13, 15 CT4 WF1 WF2 14,16 CT4 WF1 WF2 Test Conditions Fig. 23 CT1
SCSOA EREC Trr Irr RthJ-C_T RthJ-C_D RthC-H
Short Circuit Safe Operating Area Diode reverse recovery energy Diode reverse recovery time Peak reverse recovery current Each IGBT to copper plate thermal resistance Each Diode to copper plate thermal resistance Module copper plate to heat sink thermal resistance. Silicon grease applied = 0.1mm
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Fig. 1 - Maximum DC collector Current vs. case temperature
Fig. 2 - Power Dissipation vs. Case Temperature
TC = (C) Fig. 3 - Forward SOA TC = 25C; Tj 150C
TC = (C) Fig. 4 - Reverse Bias SOA Tj = 150C, VGE = 15V
VCE = (V)
VCE = (V)
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Fig. 5 - Typical IGBT Output Characteristics Tj = - 40C; tp = 500s
Fig. 6 - Typical IGBT Output haracteristics Tj = 25C; tp = 500s
VCE = (V) Fig. 7 - Typical IGBT Output Characteristics Tj = 125C; tp = 500s
VCE = (V) Fig. 8 - Typical Diode Forward Characteristics tp = 500s
VCE = (V)
VF = (V)
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Fig. 9 - Typical VCE vs. VGE Tj = - 40C
Fig. 10 - Typical VCE vs. VGE Tj = 25C
VGE = (V) Fig. 11 - Typical VCE vs. VGE Tj = 125C
VGE = (V) Fig. 12 - Typical Transfer Characteristics VCE = 20V; tp = 20s
VGE = (V)
VGE = (V)
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Fig. 13 - Typical Energy Loss vs. IC Tj = 125C; L = 800H; VCE = 400V; Rg = 10; VGE = 15V
Fig. 14 - Typical Switching Time vs. IC Tj = 125C; L = 800H; VCE = 400V; Rg = 10; VGE =15V
IC = (A) Fig. 15 - Typical Energy Loss vs. Rg Tj = 125C; L = 800H; VCE = 400V; ICE = 30A; VGE = 15V
IC = (A) Fig. 16 - Typical Switching Time vs. Rg Tj = 125C; L = 800H; VCE = 400V; ICE = 30A; VGE = 15V
Rg = ()
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Rg = ()
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Fig. 17 - Typical Diode IRR vs. IF Tj = 125C
Fig. 18 - Typical Diode IRR vs. Rg IF = 30A; Tj = 125C
IF = (A) Fig. 19 - Typical Diode IRR vs. dIF/dt VDC = 400V; VGE = 15V; IF = 30A; Tj = 125C
Rg = () Fig. 20 - Typical Diode QRR VDC = 400V; VGE = 15V; Tj = 125C
dIF/dt (A/s)
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dIF/dt (A/s)
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Fig. 21 - Typical Diode EREC vs. IF Tj = 125C
Fig. 22 - Typical Capacitance vs. VCE VGE = 0V; f = 1MHz
IF = (A) Fig. 23 - Typical Gate Charge vs. VGE IC = 30A; L = 600H; VCC = 400V Fig. 24 - On state Voltage Drop characteristic VFM vs IF tp = 400s
QG = (nC)
VFM = (V)
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Fig. 25 - Normalized Transient Impedance, Junction-to-copper plate (IGBTs)
t1, Rectangular Pulse Duration (sec) Fig. 26 - Normalized Transient Impedance, Junction-to-copper plate (FRED diodes)
t1, Rectangular Pulse Duration (sec)
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EMP family part number identification
EMP 30 P 06 D
1 2 3 4 5
1- Package type 2- Current rating 3- Current sensing configuration P= Q= E= F= G= on 3 phases on 2 phases on 3 emitters on 2 emitters on 1 emitter
4- Voltage code: Code x 100 = Vrrm 5- Circuit configuration code A= B= C= D= M= Bridge brake Inverter Inverter + brake BBI (Bridge Brake Inverter) Matrix
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EMP30P06D case outline and dimensions
Data and specifications subject to change without notice This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web Site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 3252 7105 TAC Fax: (310) 252 7309 Visit us at www.irf.com for sales contact information 06/03
Data and specifications subject to change without notice. Sales Offices, Agents and Distributors in Major Cities Throughout the World. (c) 2003 International Rectifier - Printed in Italy 08-06 - Rev. 1.2
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